Transistors RF Bipolar Power 2-30MHz 80Watts 12.5Volt Gain 12dB
MRF454: Transistors RF Bipolar Power 2-30MHz 80Watts 12.5Volt Gain 12dB
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Configuration : | Single | Maximum Operating Frequency : | 30 MHz | ||
Collector- Emitter Voltage VCEO Max : | 25 V | Emitter- Base Voltage VEBO : | 4 V | ||
Continuous Collector Current : | 20 A | Power Dissipation : | 250 W | ||
Package / Case : | Case 211-11 | Packaging : | Tray |
The MRF454 is designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. The feature of MRF454 is specified 12.5 V, 30 MHz characteristics: output power=80 W (PEP), minimum gain=12 dB and efficiency=50%.
The following is about the absolute maximum ratings of MRF454: (1)collector-emitter voltage, VCEO: 25 V; (2)collector-base voltage, VCBO: 45 V; (3)emitter-base voltage, VEBO: 4.0 V; (4)collector current-continuous, IC: 20 A; (5)total device dissipation @ TC=25, PD: 250 W and derate 1.43 W/ above 25 ; (6)storage temperature range, Tstg: -65 to +150; (7)thermal resistance, junction to case, RJC: 0.7/W.
The electrical characteristics of the MRF454 are: (1)collector-emitter breakdown voltage: 18V at IC=100mA, IB=0; (2)collector-emitter breakdown voltage: 36V at IC=50mA, VBE=0; (3)emitter-base breakdown voltage: 4.0V at IE=10mA, IC=0; (4)DC current gain: 40 min and 150 typ at IC=5.0A, VCE=5.0V; (5)output capacitance: 250pF max at VCB=15V, IE=0, f=1.0MHz.