MRF429

The MRF429 is designed for high-voltage application as a high-power linear amplifier from 2.0 to 30MHz. The features of MRF429 include: (1)specified 50 V, 30 MHz characteristics: output power=150 W (PEP) and minimum gain=13 dB; (2)intermodulation distortion @ 150 W (PEP): IMD=-32 dB (min); (3)100% tested for load mismatch at all phase angles with 30:1 VSWR@150W CW.

The following is about the absolute maximum ratings of MRF429: (1)collector-emitter voltage, VCEO: 50 V; (2)collector-base voltage, VCBO: 100 V; (3)emitter-base voltage, VEBO: 4.0 V; (4)collector current-continuous, IC: 16 A; (5)total device dissipation @ TC=25, PD: 233 W and derate 1.33 W/ above 25 ; (6)storage temperature range, Tstg: -65 to +150; (7)thermal resistance, junction to case, RJC: 0.75/W.

The electrical characteristics of the MRF429 are: (1)collector-emitter breakdown voltage: 50V at IC=200mA, IB=0; (2)collector-emitter breakdown voltage: 100V at IC=100mA, VBE=0; (3)emitter-base breakdown voltage: 4.0V at IE=10mA, IC=0; (4)DC current gain: 10 min and 30 typ at IC=5.0A, VCE=5.0V; (5)output capacitance: 220pF typ and 300pF max at VCB=50V, IE=0, f=1.0MHz.