MRF427

The MRF427 is a kind of NPN silicon RF power transistor. It is designed primarily for high voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Besides, it is ideal for maring and base station equipment.

There are some features of MRF427 as follows: (1)specified 50 V, 30 MHz characteristics: output power=25 W (PEP) and minimum gain=18 dB; (2)intermodulation distortion @ 25 W (PEP): IMD=-34 dB (min); (3)100% tested for load mismatch at all phase angles with 30:1 VSWR.

The following is about the maximum ratings of MRF427: (1)collector-emitter voltage, VCEO: 65 V; (2)collector-base voltage, VCBO: 110 V; (3)emitter-base voltage, VEBO: 4.0 V; (4)collector current-continuous, IC: 6.0 A; (5)total device dissipation @ TC=25, PD: 80 W and derate 0.457 W/ above 25 ; (6)storage temperature range, Tstg: -65 to +150 ; (7)thermal resistance, junction to case, RJC: 2.19/W.