Transistors RF Bipolar Power 1.5-30MHz 25Watts 28Volt Gain 22dB
MRF426: Transistors RF Bipolar Power 1.5-30MHz 25Watts 28Volt Gain 22dB
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Configuration : | Single | Maximum Operating Frequency : | 30 MHz |
Collector- Emitter Voltage VCEO Max : | 35 V | Emitter- Base Voltage VEBO : | 4 V |
Continuous Collector Current : | 3 A | Maximum DC Collector Current : | 6 A |
Power Dissipation : | 70 W | Package / Case : | Case 211-07 |
Packaging : | Tray |
The MRF426 is designed for high gain driver and output linear amplifier stages in 1.5 to 30MHz HF/SSB equipment. The features of MRF426 include: (1)specified 28 V, 30 MHz characteristics: output power=25 W (PEP) and minimum gain=22 dB; (2)intermodulation distortion @ 25 W (PEP): IMD=-30 dB (min); (3)100% tested for load mismatch at all phase angles with 30:1 VSWR.
The following is about the absolute maximum ratings of MRF426: (1)collector-emitter voltage, VCEO: 35 V; (2)collector-base voltage, VCBO: 65 V; (3)emitter-base voltage, VEBO: 4.0 V; (4)collector current-continuous, IC: 3.0 A; (5)total device dissipation @ TC=25, PD: 70 W and derate 0.4 W/ above 25 ; (6)storage temperature range, Tstg: -65 to +150; (7)thermal resistance, junction to case, RJC: 2.5/W.
The electrical characteristics of the MRF426 are: (1)collector-emitter breakdown voltage: 35V at IC=50mA, IB=0; (2)collector-emitter breakdown voltage: 65V at IC=50mA, IE=0; (3)emitter-base breakdown voltage: 4.0V at IE=10mA, IC=0; (4collector cutoff current: 10mA max at VCE=28V, VBE=0; (5)DC current gain: 10 min and 35 typ at IC=1.0A, VCE=5.0V.