Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB
MRF422: Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB
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Configuration : | Single | Maximum Operating Frequency : | 30 MHz |
Collector- Emitter Voltage VCEO Max : | 40 V | Emitter- Base Voltage VEBO : | 3 V |
Continuous Collector Current : | 20 A | Maximum DC Collector Current : | 30 A |
Power Dissipation : | 290 W | Package / Case : | Case 211-11 |
Packaging : | Tray |
The MRF422 is designed for pplication as a high-power linear amplifier from 2.0 to 30MHz. The features of MRF422 are: (1)specified 28V, 30MHz performance: output power=150W, power gain=10dB min, efficiency=40% min; (2)intermodulation distortion @ 150W (PEP): IMD=-30dB (min); (3)100% tested for load mismatch at all phase angles with 30:1 VSWR.
The following is about the absolute maximum ratings of MRF422: (1)collector-emitter voltage, VCEO: 40 V; (2)collector-base voltage, VCBO: 85 V; (3)emitter-base voltage, VEBO: 3.0 V; (4)total device dissipation @ TC=25, PD: 290 W and derate 1.66 W/ above 25 ; (5)storage temperature range, Tstg: -65 to +150; (8)thermal resistance, junction to case, RJC: 0.6/W.
The electrical characteristics of the MRF422 are: (1)collector-emitter breakdown voltage: 35V at IC=200mA, IB=0; (2)collector-emitter breakdown voltage: 85V min at IC=100mA, VBE=0; (3)emitter-base breakdown voltage: 3.0V at IE=10mA, IC=0; (4)DC current gain: 15 min and 120 max at IC=5.0A, VCE=5.0V; (5)output capacitance: 420pF typ at VCB=28V, IE=0, f=1.0MHz.