Transistors RF MOSFET Power 250W 860MHZ 32V
MRF377HR5: Transistors RF MOSFET Power 250W 860MHZ 32V
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 0.47 GHz to 0.86 GHz | Gain : | 16.7 dB |
Output Power : | 45 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 17 A | Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-860C3-5 |
Packaging : | Reel |
Rating |
Symbol |
Value |
Unit | ||||
Drain-Source Voltage |
VDSS |
- 0.5, +65 |
Vdc | ||||
Gate-Source Voltage |
VGS |
- 0.5, +15 |
Vdc | ||||
Drain Current - Continuous |
ID |
17 |
Vdc | ||||
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
648 3.7 |
W W/°C | ||||
Storage Temperature Range |
Tstg |
- 65 to +150 |
°C | ||||
Operating Junction Temperature |
TJ |
200 |
°C |
Technical/Catalog Information | MRF377HR5 |
Vendor | Freescale Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Screw Mount |
Package Name | NI-860C3 |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 32.0 V [Nom] |
Voltage Gate to Source (Vgs) | 2.8 V [Max] |
Continuous Drain Current (Id) | 17.00 A [Nom] |
Power Dissipation | 648.000 W [Max] |
Other Names | MRF377HR5 MRF377HR5 |