Transistors RF MOSFET Power RF POWER LDMOS U650
MRF374A: Transistors RF MOSFET Power RF POWER LDMOS U650
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Configuration : | Single Dual Drain Dual Gate | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 70 V | Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 375F-04 |
Packaging : | Tube |
Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VDSS |
70 |
Vdc |
GateSource Voltage |
VGS |
0.5, +15 |
Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
302 1.72 |
Watts W/°C |
Storage Temperature Range |
Tstg |
65 to +150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |