Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L
MRF373ALR5: Transistors RF MOSFET Power 75W 860MHZ LDMOS NI360L
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Configuration : | Single | Transistor Polarity : | N-Channel |
Drain-Source Breakdown Voltage : | 70 V | Gate-Source Breakdown Voltage : | - 0.5 V, + 15 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | NI-360-3 |
Packaging : | Reel |
Technical/Catalog Information | MRF373ALR5 |
Vendor | Freescale Semiconductor |
Category | Transistors, FETs, IGBTs |
Mounting Type | Surface (SMD, SMT) |
Package Name | NI-360 |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 32.0 V [Nom] |
Voltage Gate to Source (Vgs) | 4.5 V [Max] |
Power Dissipation | 197.000 W [Max] |
Packaging | Tape & Reel, 13" |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | MRF373ALR5 MRF373ALR5 |