Transistors RF MOSFET Power RF PWR FET SOE PKG
MRF282ZR1: Transistors RF MOSFET Power RF PWR FET SOE PKG
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 2 GHz | Gain : | 10.5 dB | ||
Output Power : | 10 W | Drain-Source Breakdown Voltage : | 65 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | NI-200Z-3 | Packaging : | Reel |