Transistors RF MOSFET Power 5-500MHz 150Watts 28Volt 10dB
MRF275G: Transistors RF MOSFET Power 5-500MHz 150Watts 28Volt 10dB
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 100 MHz to 500 MHz | Gain : | 11.2 dB at 500 MHz |
Output Power : | 150 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 26 A | Gate-Source Breakdown Voltage : | +/- 40 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 375-04 |
Packaging : | Tray |
Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VDSS |
65 |
Vdc |
DrainGate Voltage (RGS = 1.0 M) |
VDGR |
65 |
Vdc |
GateSource Voltage |
VGS |
±20 |
Adc |
Drain Current - Continuous |
ID |
26 |
Adc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
400 2.27 |
Watts W/°C |
Storage Temperature Range |
Tstg |
65 to +150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |