MRF247

Features: • Specified 12.5 Volt, 175 MHz Characteristics -Output Power = 75 WattsPower Gain = 7.0 dB MinEfficiency = 55% Min• Characterized With Series Equivalent LargeSignal Impedance Parameters• Internal Matching Network Optimized for Minimum Gain Frequency SlopeResponse Over t...

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SeekIC No. : 004426941 Detail

MRF247: Features: • Specified 12.5 Volt, 175 MHz Characteristics -Output Power = 75 WattsPower Gain = 7.0 dB MinEfficiency = 55% Min• Characterized With Series Equivalent LargeSignal Impedance P...

floor Price/Ceiling Price

Part Number:
MRF247
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

• Specified 12.5 Volt, 175 MHz Characteristics -
Output Power = 75 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
• Characterized With Series Equivalent LargeSignal Impedance Parameters
• Internal Matching Network Optimized for Minimum Gain Frequency Slope
Response Over the Range 136 to 175 MHz
• Load Mismatch Capability at Rated Pout and Supply Voltage





Specifications

Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 18 Vdc
CollectorBase Voltage VCBO 36 Vdc
EmitterBase Voltage VEBO 4.0 Vdc
Collector Current - Peak IC 20 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD 250
1.43
Watts
W/°C
Storage Temperature Range Tstg −65 to +150 °C





Description

The MRF247 is a kind of NPN silicon RF power transistor.It is designed for 12.5 Volt VHF largesignal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

MRF247 has some features as follows.(1) characterized with series equivalent largesignal impedance parameters; (2) internal matching network optimized for minimum gain frequency slope response over the range 136 to 175 MHz; (3) load mismatch capability at rated pout and supply voltage.

What comes next is about maximum ratings of MRF247.(1): collector-emitter voltage(VCEO) is 18 Vdc; (2): collector-base voltage(VCBO) is 36 Vdc; (3): emitter-base voltage(VEBO) is 4.0 Vdc; (4): peak collector current(IC) is 20 Adc; (5): total device dissipation(PD) is 250 Watts at TC is 25 and is 1.43 W/ at derate is above 25; (6): storage temperature range(Tstg) is from -65 to +150; (7): the minimum collector-emitter breakdown voltage is 18 Vdc when IC is 100 mAdc and IB is 0; (8): the minimum collector-emitter breakdown voltage is 36 Vdc at IC is 50 mAdc and VBE is 0; (9): the minimum emitter-base breakdown voltage is 4.0 Vdc at the condition of IE is 10 mAdc and IC is 0.






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