Features: • Specified 12.5 Volt, 175 MHz Characteristics -Output Power = 75 WattsPower Gain = 7.0 dB MinEfficiency = 55% Min• Characterized With Series Equivalent LargeSignal Impedance Parameters• Internal Matching Network Optimized for Minimum Gain Frequency SlopeResponse Over t...
MRF247: Features: • Specified 12.5 Volt, 175 MHz Characteristics -Output Power = 75 WattsPower Gain = 7.0 dB MinEfficiency = 55% Min• Characterized With Series Equivalent LargeSignal Impedance P...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Rating | Symbol | Value | Unit |
CollectorEmitter Voltage | VCEO | 18 | Vdc |
CollectorBase Voltage | VCBO | 36 | Vdc |
EmitterBase Voltage | VEBO | 4.0 | Vdc |
Collector Current - Peak | IC | 20 | Adc |
Total Device Dissipation @ TC = 25°C (1) Derate above 25°C |
PD | 250 1.43 |
Watts W/°C |
Storage Temperature Range | Tstg | −65 to +150 | °C |
The MRF247 is a kind of NPN silicon RF power transistor.It is designed for 12.5 Volt VHF largesignal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
MRF247 has some features as follows.(1) characterized with series equivalent largesignal impedance parameters; (2) internal matching network optimized for minimum gain frequency slope response over the range 136 to 175 MHz; (3) load mismatch capability at rated pout and supply voltage.
What comes next is about maximum ratings of MRF247.(1): collector-emitter voltage(VCEO) is 18 Vdc; (2): collector-base voltage(VCBO) is 36 Vdc; (3): emitter-base voltage(VEBO) is 4.0 Vdc; (4): peak collector current(IC) is 20 Adc; (5): total device dissipation(PD) is 250 Watts at TC is 25 and is 1.43 W/ at derate is above 25; (6): storage temperature range(Tstg) is from -65 to +150; (7): the minimum collector-emitter breakdown voltage is 18 Vdc when IC is 100 mAdc and IB is 0; (8): the minimum collector-emitter breakdown voltage is 36 Vdc at IC is 50 mAdc and VBE is 0; (9): the minimum emitter-base breakdown voltage is 4.0 Vdc at the condition of IE is 10 mAdc and IC is 0.