MRF230

DescriptionThe MRF230 is a kind of NPN Silicon RF power transistor.It is designed for 12.5 volt, mid-band large signal amplifier applications in industrial and commercial FM equipment operating in the 40-100MHz range. There are some information about MRF230 features.(1) specified 12.5V,90 MHz cha...

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SeekIC No. : 004426931 Detail

MRF230: DescriptionThe MRF230 is a kind of NPN Silicon RF power transistor.It is designed for 12.5 volt, mid-band large signal amplifier applications in industrial and commercial FM equipment operating in t...

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Part Number:
MRF230
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Description

The MRF230 is a kind of NPN Silicon RF power transistor.It is designed for 12.5 volt, mid-band large signal amplifier applications in industrial and commercial FM equipment operating in the 40-100MHz range.

There are some information about MRF230 features.(1) specified 12.5V,90 MHz characteristics; (2) output power: 1.5 W; (3) minimum gain: 10 dB; (4) efficiency: 55%; (5) 100 % tested for load mismatch at all phase angles with 30:1 VSWR; (6) characterized with parallel equivalent large-signal impedance parameters; (7) characterized with series equivalent large-signal impedance parameters

Then is about maximum ratings of MRF230.(1): collector-emitter voltage(VCEO) is 18 Vdc; (2): collector-base voltage(VCBO) is 36 Vdc; (3): emitter-base voltage(VEBO) is 4.0 Vdc; (4): collector current continuous(IC) is 0.5 Adc; (5): total device dissipation(PD) is 5.0 W at TA is 25; (6): storage temperature range(Tstg) is from  -65 to 200; (7): the maximum thermal resistance,junction to case is 35 /W; (8): the minimum collector-emitter breakdown voltage is 18 Vdc when IC is 25 mAdc and IB is 0; (9): the maximum collector cutoff current is 0.5 nAdc at VCB is 15 Vdc and IE is 0; (10): the minimum emitter-base breakdown voltage is 4.0 Vdc when IE is 0.25 mAdc and IC is 0.




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