MRF227

The MRF227 is a kind of NPN silicon RF power transistor.It is designed for large-signal amplifier applications to 225 MHz.It is available in TO-39 package.

Then is some information about the maximum ratings of MRF227. (1): IC is 0.6 A,VCE is 16 V,VCB is 36 V; (2): PDISS is 8 W at TC is 25; (3): TJ is from -65 to 200; (4): TSTG is from -65 to 200; (5): JC is 2.5 /W; (6): the minimum BVCES is 36 V,BVCEO is 16 V and BVEBO is 4.0 V at IC is 50 mA; (7): the maximum ICBO is 15 mA at the condition of VCB is 15 V; (8): the maximum COB is 15 pF at VCB is 12.5 V; (9): the minimum GPE is 13.5 dB,the typical is 15 dB at POUT is 3.0 W and VCE is 12.5 V and f is 225 MHz; (10): is 60 % when POUT is 3.0 W,VCE is 12.5 V and f is 225 MHz.

There is no much information about MRF227's electrical characters,if you want more details,please download the datasheet at www.seekic.com and we will updata in time.

The MRF227 is designed for large signal power amplifier applications operating to 225 MHz