MRF224

RF Amplifier RF Bipolar Trans

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MRF224 Picture
SeekIC No. : 00613276 Detail

MRF224: RF Amplifier RF Bipolar Trans

floor Price/Ceiling Price

Part Number:
MRF224
Mfg:
TriQuint Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description

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Description

The MRF224 is a kind of NPN Silicon RF power transistor.It is designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies.

There are some information about MRF224 features.(1) specified 12.5 Volt,175MHz characteristics; (2) output power: 40 W; (3) minimum gain: 4.5 dB; (4) minimum efficiency: 70 %.

Then is about maximum ratings of MRF224.(1): collector-emitter voltage(VCEO) is 18 Vdc; (2): collector-base voltage(VCBO) is 36 Vdc; (3): emitter-base voltage(VEBO) is 4.0 Vdc; (4): collector current continuous(IC) is 7.0 Adc; (5): total device dissipation(PD) is 80 W at TA is 25; (6): storage temperature range(Tstg) is from -65 to 200; (7): stud torque is from -6.5 to In-Lb; (7): the minimum collector-emitter breakdown voltage is 18 Vdc at IC is 100 mAdc and IB is 0; (8): the minimum emitter-base breakdown voltage is 4.0 Vdc when IE is 10 mAdc and IC is 0; (9): the maximum collector cutoff current is 10 mAdc at VCE is 15 Vdc,VBE is 0 and TC is 25.

If you want to know more information such as the electrical characteristics about the MRF224, please download the datasheet at www.seekic.com.






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