MRF216

The MRF216 is designed as NPN silicon RF power transistor for 12.5V VHF large-signal power amplifier applications in industrial and commercial FM equipment operating to 175MHz.

MRF216 has four features. (1) Specified 12.5V, 175MHz and its output power is 40W and minimum gain is 6.7dB and efficiency is 60%. (2) 100% tested for load mismatch at all phase angles with 20:1 VSWR. (3) characterized with series equivalent large signal impedance parameters. (4) built-in matching network for broad band operation. That are all the main features.

Some absolute maximum ratings of MRF216 have been concluded into several points as follow. (1) Its collector to base voltage would be 36V. (2) Its collector to emitter voltage would be 18V. (3) Its emitter to base voltage would be 4.0V. (4) Its collector current continuous would be 6.0A. (5) Its power dissipation would be 75W. (6) Its storage temperature range would be from -65°C to +200°C.

Also some electrical characteristics about MRF216. (1) Its collector to emitter breakdown voltage would be min 18A with condition of Ic=100mA and Ib=0. (2) Its collector to emitter breakdown voltage would be min 36V with condition of Ic=20mA and Vbe=0. (3) Its emitter to base breakdown voltage would be min 4.0V with condition of Ie=10mA and Ic=0. (4) Its collector cutoff current would be max 10mA with condition of Vce=15Vdc and Vbe=0 and would be max 2.5mA with condition of Vcb=15V and Ie=0. (5) Its DC current gain would be min 5.0 with condition of Ic=1.0A and Vce=5.0V. (6) Its output capacitance would be typ 170pF and max 200pF with condition of f=1MHz and Vcb=15V, Ie=0. (7) Its efficiency would be min 60% with condition of f=175MHz and output power is 40W and Vcc=12.5V. (8) Itscommon emitter amplifier power gain would be min 6.7dB with condition of f=175MHz and output power is 40W and Vcc=12.5V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!