MRF212

The MRF212 is designed as NPN silicon RF power transistor for 12.5V VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies.

MRF212 has five features. (1) 175MHz. (2) 12.5V. (3) output power is 10W. (4) power gain is 9.0dB min. (5) common emitter configuration. That are all the main features.

Some absolute maximum ratings of MRF212 have been concluded into several points as follow. (1) Its collector to base voltage would be 36V. (2) Its collector to emitter voltage would be 18V. (3) Its emitter to base voltage would be 4.0V. (4) Its collector current continuous would be 2.0A. (5) Its power dissipation would be 37W. (6) Its junction temperature would be 200°C. (7) Its storage temperature range would be from -65°C to +150°C. (8) Its junction to case thermal resistance would be 5.6°C/W.

Also some electrical characteristics about MRF212. (1) Its collector to emitter breakdown voltage would be min 18A with condition of Ic=100mA and Ib=0. (2) Its collector to emitter breakdown voltage would be min 36V with condition of Ic=20mA and Vbe=0. (3) Its emitter to base breakdown voltage would be min 4.0V with condition of Ie=10mA and Ic=0. (4) Its collector cutoff current would be max 0.5mA with condition of Vcb=15Vdc and Ie=0. (5) Its DC current gain would be min 5.0 and max 200 with condition of Ic=1.0A and Vce=5.0V. (6) Its output power would be min 10W with condition of f=175MHz and input power is 3.5W and Vce=12.5V. (7) Its efficiency would be min 60% with condition of f=175MHz and input power is 3.5W and Vce=12.5V. (8) Its common emitter amplifier power gain would be min 9.0dB with condition of f=175MHz and input power is 1W and Vce=12.5V. (9) Its output capacitance would be max 85pF with condition of f=1MHz and Vcb=15V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!