MRF21180R6

Features: • Typical 2 -carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 1...

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SeekIC No. : 004426928 Detail

MRF21180R6: Features: • Typical 2 -carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over3.84 MHz BW @...

floor Price/Ceiling Price

Part Number:
MRF21180R6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Typical 2 -carrier W-CDMA Performance for VDD = 28 Volts,
    IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,
    Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
    3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products
    Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz,
    Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
        Output Power- 38 Watts (Avg.)
        Power Gain- 12.1 dB
        Efficiency - 22%
        IM3 - 37.5 dBc
        ACPR- -41 dBc
• Internally Input and Output Matched, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.



Specifications

Rating Symbol Value Unit
Drain−Source Voltage VDSS 65 Vdc
Gate−Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
                 Derate above 25°C
PD 380
2.17
Watts
W/°C
Storage Temperature Range Tstg −65 to +150 °C
Operating Junction Temperature TJ 200 °C



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