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MRF21125S

ApplicationTypical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 1600mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHzbandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.Output Power - 20 WattsEfficiency ...

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SeekIC No. : 004426926 Detail

MRF21125S: ApplicationTypical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 1600mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,adjacent channels at ± 5 MHz , ACPR and IM3 measured in...

MRF21125S Data Sheet

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Part Number:
MRF21125S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

Typical 2carrier WCDMA Performance for VDD = 28 Volts, IDQ = 1600
mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz,
adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz
bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF.
Output Power - 20 Watts
Efficiency - 18%
Gain - 13 dB
IM3 - 43 dBc
ACPR - 45 dBc
100% Tested under 2carrier WCDMA
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent LargeSignal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.




Pinout






Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 330
1.89		 Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C





Description

The MRF21125S is designed as RF power field effect transistors of N-channel enhancement-mode lateral MOSFETs for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCNPCS/cellular radio and WLL applications.

MRF21125S has ten features. (1) Typical 2carrier WCDMA Performance for VDD = 28Volts, IDQ = 1600mA, f1 = 2.1125 GHz, f2 = 2.1225GHz, channel bandwidth = 3.84MHz, adjacent channels at ±5MHz , ACPR and IM3 measured in 3.84MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. (2) 100% tested under 2carrier W-CDMA. (3) Internally matched, controlled Q, for ease of use. (4) High gain, high efficiency and high linearity. (5) Integrated ESD protection. (6) Designed for maximum gain and insertion phase flatness. (7) Capable of handling 5:1 VSWR, at 28Vdc, 2170MHz, 125Watts (CW) output power. (8) Excellent thermal stability. (9) Characterized with series equivalent large signal impedance parameters. (10) Available in tape and reel. R3 suffix = 250 units per 56mm, 13 inch reel. That are all the main features.

Some absolute maximum ratings of MRF21125S have been concluded into several points as follow. (1) Its drain to source voltage would be 65V. (2) Its gate to source voltage would be +15Vdc, -0.5Vdc. (3) Its total device dissipation would be 330W at 25°C and would be 1.89W/°C for derate above 25°C. (4) Its storage temperature range would be from -65°C to +150°C. (5) Its operating junction temperature would be 200°C.

Also some electrical characteristics about MRF21125S. (1) Its drain to source breakdown voltage would be min 65V. (2) Its gate to source leakage current would be max 1uAdc. (3) Its zero gate voltage drain leakage current would be max 10uAdc. (4) Its forward transconductance would be typ 10.8S. (5) Its gate threshold voltage would be min 2Vdc and max 4Vdc. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!






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