MRF21120

The MRF21120 is designed as one kind of RF power field effect transistors of N-channel enhancement-mode lateral MOSFETs for WCDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCNPCS/cellular radio and WLL applications.

MRF21120 has eight features. (1) WCDMA performance at -45 dBc, 5MHz offset, 15 DTCH, 1 perch, output power 14Watts (avg.), power gain 11.5dB, efficiency 16%. (2) Internally matched, controlled Q, for ease of use. (3) High gain, high efficiency and high linearity. (4) Integrated ESD protection. (5) Designed for maximum gain and insertion phase flatness. (6) Capable of handling 10:1 VSWR, at 28Vdc, 2170MHz, 120Watts (CW) output power. (7) Excellent thermal stability. (8) Characterized with series equivalent large signal impedance parameters. That are all the main features.

Some absolute maximum ratings of MRF21120 have been concluded into several points as follow. (1) Its drain to source voltage would be 65V. (2) Its gate to source voltage would be +15Vdc, -0.5Vdc. (3) Its total device dissipation would be 389W at 25°C and would be 2.22W/°C for derate above 25°C. (4) Its storage temperature range would be from -65°C to +150°C. (5) Its operating junction temperature would be 200°C.

Also some electrical characteristics about MRF21120. (1) Its drain to source breakdown voltage would be min 65V. (2) Its gate to source leakage current would be max 1uAdc. (3) Its zero gate voltage drain leakage current would be max 10uAdc. (4) Its forward transconductance would be typ 4.8S. (5) Its gate threshold voltage would be min 2.5Vdc and max 3.8Vdc. (6) Its gate quiescent voltage would be min 3Vdc and typ 3.9Vdc and max 5Vdc. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!