MRF21090S

The MRF21090S is designed as RF power field effect transistors of N-channel enhancement-mode lateral MOSFETs for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

MRF21090S has nine features. (1) Typical W-CDMA performance for 2140MHz, 28Volts, 4.096MHz BW at 5MHz offset, 1 PERCH 15 DTCH: output power 11.5Watts, efficiency 16%, gain 12.2dB, ACPR -45dBc. (2) Internally matched, controlled Q, for ease of use. (3) High gain, high efficiency and high linearity (4) Integrated ESD protection. (5) Designed for maximum gain and insertion phase flatness. (6) Capable of handling 10:1 VSWR, at 28Vdc, 2110MHz, 90Watts CW output power. (7) Excellent thermal stability. (8) Characterized with series equivalent large-signal impedance parameters. (9) In tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel. That are all the main features.

Some absolute maximum ratings of MRF21090S have been concluded into several points as follow. (1) Its drain to source voltage would be 65V. (2) Its gate to source voltage would be +15Vdc, -0.5Vdc. (3) Its total device dissipation would be 270W at 25°C and would be 1.54W/°C for derate above 25°C. (4) Its storage temperature range would be from -65°C to +150°C. (5) Its operating junction temperature would be 200°C.

Also some electrical characteristics about MRF21090S. (1) Its drain to source breakdown voltage would be min 65V. (2) Its gate to source leakage current would be max 1uAdc. (3) Its zero gate voltage drain leakage current would be max 10uAdc. (4) Its forward transconductance would be typ 7.2S. (5) Its gate threshold voltage would be min 2Vdc and max 4Vdc. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!