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MRF21085LSR3

IC MOSFET RF N-CHAN NI-780S

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SeekIC No. : 003434733 Detail

MRF21085LSR3: IC MOSFET RF N-CHAN NI-780S

MRF21085LSR3 Data Sheet

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Part Number:
MRF21085LSR3
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 2.11GHz Gain: 13.6dB
Voltage - Test: 28V Current Rating: 10µA
Noise Figure: - Current - Test: 1A
Power - Output: 19W Voltage - Rated: 65V
Package / Case: NI-780S Supplier Device Package: NI-780S    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Voltage - Test: 28V
Current - Test: 1A
Voltage - Rated: 65V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Package / Case: NI-780S
Supplier Device Package: NI-780S
Frequency: 2.11GHz
Power - Output: 19W
Gain: 13.6dB


Application

Typical 2-carrier W-CDMA Performance for VDD = 28 Volts,
   IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
   3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1  -5 MHz
   and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
   Output Power ó 19 Watts Avg.
   Power Gain ó 13.6 dB
   Efficiency ó 23%
   IM3 ó -37.5 dBc
   ACPR ó -41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW  Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 224
1.28		 Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C



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