MRF21060R5

The MRF21060R5 is one kind of 2170 MHz, 60 W, 28 V lateral N-channel RF power MOSFETs that designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. It can be used in W-CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

Features of the MRF21060R5 are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)internally matched, controlled Q, for ease of use;(3)high gain, high efficiency and high linearity;(4)integrated ESD protection;(5)designed for maximum gain and insertion phase flatness;(6)capable of handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 watts CW output power;(7)excellent thermal stability;(8)characterized with series equivalent large-signal impedance parameters.

The absolute maximum ratings of the MRF21060R5 can be summarized as:(1)drain-source voltage:+65 Vdc;(2)gate-source voltage:-0.5 to +15 Vdc;(3)total device dissipation @ TC=25°C:180 W;(4)total derate above 25°C:0.98 W/°C;(5)storage temperature range:-65 to +150 °C;(6)operating junction temper-ature:200 °C;(7)thermal resistance, junction to case:1.02 °C/W.If you want to know more information such as the electrical characteristics about the MRF21060R5, please download the datasheet in www.seekic.com or www.chinaicmart.com .