MRF21060

The MRF21060 is designed as RF power field effect transistors of N-channel enhancement-mode lateral MOSFETs for PCN and PCS base station applications with frequencies from 2.1 to 2.2GHz. Suitable for W-CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications.

MRF21060 has nine features. (1) Typical W-CDMA performance: 2140MHz, 28Volts 5MHz offset at 4.096MHz BW, 15 DTCH output power 6.0Watts, power gain 12.5dB, drain efficiency 15%. (2) Internally matched, controlled Q, for ease of use. (3) High gain, high efficiency and high linearity. (4) Integrated ESD protection. (5) Designed for maximum gain and insertion phase flatness. (6) Capable of handling 10:1 VSWR, at 28Vdc, 2.11GHz, 60watts CW output power. (7) Excellent thermal stability. (8) Characterized with series equivalent large-signal impedance parameters. (9) In tape and reel. R3 suffix = 250 units per 56mm, 13 inch reel. That are all the main features.

Some absolute maximum ratings of MRF21060 have been concluded into several points as follow. (1) Its drain to source voltage would be 65V. (2) Its gate to source voltage would be +15Vdc, -0.5Vdc. (3) Its total device dissipation would be 180W at 25°C and would be 0.98W/°C for derate above 25°C. (4) Its storage temperature range would be from -65°C to +150°C. (5) Its operating junction temperature would be 200°C.

Also some electrical characteristics about MRF21060. (1) Its drain to source breakdown voltage would be min 65V. (2) Its gate to source leakage current would be max 1uAdc. (3) Its zero gate voltage drain leakage current would be max 6uAdc. (4) Its forward transconductance would be typ 4.7S. (5) Its gate threshold voltage would be min 2Vdc and max 4Vdc. (6) Its gate quiescent voltage would be min 2.5Vdc and typ 3.9Vdc and max 4.5Vdc. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!