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MRF21045LSR3

Transistors RF MOSFET Power RF PWR LDMOS NI400LS

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SeekIC No. : 00220356 Detail

MRF21045LSR3: Transistors RF MOSFET Power RF PWR LDMOS NI400LS

MRF21045LSR3 Data Sheet

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Part Number:
MRF21045LSR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.11 GHz to 2.17 GHz Gain : 15 dB
Output Power : 10 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : NI-400S-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 15 dB
Frequency : 2.11 GHz to 2.17 GHz
Output Power : 10 W
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Package / Case : NI-400S-3


Application

Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
   f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
   Adjacent Channels measured over 3.84 MHz Bandwidth at  f1 -5 MHz
   and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
   at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
   Output Power ó 10 Watts Avg.
   Efficiency ó 23.5%
   Gain ó 15 dB
   IM3 ó -37.5 dBc
   ACPR ó -41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
   Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40 Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 105
0.60		 Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C



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