MRF21045LR3

IC MOSFET RF N-CHAN NI-400

product image

MRF21045LR3 Picture
SeekIC No. : 003434978 Detail

MRF21045LR3: IC MOSFET RF N-CHAN NI-400

floor Price/Ceiling Price

Part Number:
MRF21045LR3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/5

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 2.16GHz Gain: 15dB
Voltage - Test: 28V Current Rating: 10µA
Noise Figure: - Current - Test: 500mA
Power - Output: 10W Voltage - Rated: 65V
Package / Case: NI-400 Supplier Device Package: NI-400-240    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Gain: 15dB
Transistor Type: LDMOS
Voltage - Test: 28V
Current - Test: 500mA
Voltage - Rated: 65V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Power - Output: 10W
Frequency: 2.16GHz
Package / Case: NI-400
Supplier Device Package: NI-400-240


Application

Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
   f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
   Adjacent Channels measured over 3.84 MHz Bandwidth at  f1 -5 MHz
   and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
   at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
   Output Power ó 10 Watts Avg.
   Efficiency ó 23.5%
   Gain ó 15 dB
   IM3 ó -37.5 dBc
   ACPR ó -41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
   Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40 Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.



Pinout

  Connection Diagram


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 105
0.60
Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Test Equipment
Cables, Wires - Management
Audio Products
Potentiometers, Variable Resistors
Line Protection, Backups
Discrete Semiconductor Products
View more