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MRF21030LR3

Transistors RF MOSFET Power 30W 2.2GHZ LDMOS NI400L

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SeekIC No. : 00220712 Detail

MRF21030LR3: Transistors RF MOSFET Power 30W 2.2GHZ LDMOS NI400L

MRF21030LR3 Data Sheet

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Part Number:
MRF21030LR3
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2 GHz to 2.2 GHz Gain : 14 dB
Output Power : 3.5 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : NI-400-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 14 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Frequency : 2 GHz to 2.2 GHz
Package / Case : NI-400-3
Output Power : 3.5 W


Features:

• Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts
     Output Power - 3.5 Watts
     Power Gain - 14 dB
     Efficiency - 15%
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40 Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.


Specifications

Rating Symbol Value Unit
Drain−Source Voltage VDSS 65 Vdc
Gate−Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
                  Derate above 25°C		 PD 83.3
0.48		 Watts
W/°C
Storage Temperature Range Tstg −65 to +150 °C
Operating Junction Temperature TJ 200 °C



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