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MRF21010LSR1

Transistors RF MOSFET Power 10W 28V 2.1 GHZ LDMOS

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SeekIC No. : 00220503 Detail

MRF21010LSR1: Transistors RF MOSFET Power 10W 28V 2.1 GHZ LDMOS

MRF21010LSR1 Data Sheet

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Part Number:
MRF21010LSR1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2.1 GHz Gain : 13.5 dB
Output Power : 2.1 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V Maximum Operating Temperature : + 150 C
Package / Case : NI-360S-3 Packaging : Reel    

Description

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 13.5 dB
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Frequency : 2.1 GHz
Package / Case : NI-360S-3
Output Power : 2.1 W


Application

Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,
   5 MHz Offset/4.096 MHz BW, 15 DTCH
   Output Power ó 2.1 Watts
   Power Gain ó 13.5 dB
   Efficiency ó 21%
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,10 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal.


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 43.75
0.25		 Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C



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