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MRF21010LR1

IC MOSFET RF N-CHAN NI-360

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SeekIC No. : 003434974 Detail

MRF21010LR1: IC MOSFET RF N-CHAN NI-360

MRF21010LR1 Data Sheet

floor Price/Ceiling Price

US $ 26.79~26.79 / Piece | Get Latest Price
Part Number:
MRF21010LR1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • Unit Price
  • $26.79
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 2.11GHz Gain: 13.5dB
Voltage - Test: 28V Current Rating: 10µA
Noise Figure: - Current - Test: 100mA
Power - Output: 11W Voltage - Rated: 65V
Package / Case: NI-360 Supplier Device Package: NI-360    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Gain: 13.5dB
Transistor Type: LDMOS
Voltage - Test: 28V
Current - Test: 100mA
Voltage - Rated: 65V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Frequency: 2.11GHz
Package / Case: NI-360
Supplier Device Package: NI-360
Power - Output: 11W


Application

Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,
   5 MHz Offset/4.096 MHz BW, 15 DTCH
   Output Power ó 2.1 Watts
   Power Gain ó 13.5 dB
   Efficiency ó 21%
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,10 Watts CW Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal.


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 43.75
0.25		 Watts
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Operating Junction Temperature TJ 200 °C



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