Specifications Rating Symbol Value Unit CollectorEmitter Voltage (IB = 0 mA) VCEO 25 Vdc CollectorEmitter Voltage VCES 60 Vdc CollectorBase Voltage VCBO 60 Vdc CollectorEmitter Voltage (RBE = 100 Ohm) VCER 30 Vdc BaseEmitter Voltage VEB -3 Vdc Collector Cur...
MRF20060_1248487: Specifications Rating Symbol Value Unit CollectorEmitter Voltage (IB = 0 mA) VCEO 25 Vdc CollectorEmitter Voltage VCES 60 Vdc CollectorBase Voltage VCBO 60 Vdc Collector...
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Rating | Symbol | Value | Unit |
CollectorEmitter Voltage (IB = 0 mA) | VCEO | 25 | Vdc |
CollectorEmitter Voltage | VCES | 60 | Vdc |
CollectorBase Voltage | VCBO | 60 | Vdc |
CollectorEmitter Voltage (RBE = 100 Ohm) | VCER | 30 | Vdc |
BaseEmitter Voltage | VEB | -3 | Vdc |
Collector Current Continuous | IC | 8 | Adc |
Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 250 1.43 |
Watts W/ |
Storage Temperature Range | Tstg | 65 to +150 | |
Operating Junction Temperature | TJ | 200 |
The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices MRF20060 and MRF20060S make them ideal for largesignal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multicarrier base station RF power amplifiers.
MRF20060 and MRF20060S features
• Guaranteed Twotone Performance at 2000 MHz, 26 Volts Output Power - 60 Watts (PEP) Power Gain - 9 dB Efficiency - 33% Intermodulation Distortion - 30 dBc
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• SParameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power
• Designed for FM, TDMA, CDMA and MultiCarrier Applications