MRF19085LR3

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Gain: 13dB
Voltage - Test: 26V
Voltage - Rated: 65V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Power - Output: 18W
Current - Test: 850mA
Frequency: 1.93GHz
Package / Case: NI-780
Supplier Device Package: NI-780


Features:

• Typical 2 -Carrier N-CDMA Performance for V_DD = 26 Volts,  I_DQ = 850 mA, P_out = 18 Watts Avg.,f1 = 1960 MHz,f2 = 1962.5 MHz IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1  -885 Khz and f2 +885 kHz. Distortion  Products Measured over 1.2288 MHz Bandwidth at f1- 2.5 MHz and  f2+2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
        Output Power 18 Watts Avg.
        Power Gain 13.0 dB
        Efficiency 23% 
        ACPR -51 dB
        IM3 -36.5 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.


Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	VDSS	65	Vdc
Gate-Source Voltage	VGS	-0.5, +15	Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	273 1.56	Watts W/°C
Storage Temperature Range	Tstg	- 65 to +150	°C
Operating Junction Temperature	TJ	200	°C

Description

MRF19085LR3 is Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.