MRF19045LR3

IC MOSFET RF N-CHAN NI-400

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SeekIC No. : 003434965 Detail

MRF19045LR3: IC MOSFET RF N-CHAN NI-400

floor Price/Ceiling Price

Part Number:
MRF19045LR3
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Series: - Continuous Collector Current : 5 mA
Manufacturer: Freescale Semiconductor Transistor Type: LDMOS
Frequency: 1.93GHz Gain: 14.5dB
Voltage - Test: 26V Current Rating: 10µA
Noise Figure: - Current - Test: 550mA
Power - Output: 45W Voltage - Rated: 65V
Package / Case: NI-400 Supplier Device Package: NI-400-240    

Description

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Gain: 14.5dB
Power - Output: 45W
Voltage - Test: 26V
Voltage - Rated: 65V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Package / Case: NI-400
Current - Test: 550mA
Supplier Device Package: NI-400-240
Frequency: 1.93GHz


Features:

• Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi -carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
        Output Power  9.5 Watts Avg.
        Power Gain 14.9 dB
        Efficiency 23.5% 
        Adjacent Channel Power 
                885 kHz:  -50 dBc @ 30 kHz BW
                IM3 -37 dBc
• 100% Tested Under 2- Carrier N-CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW  Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.



Specifications

Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
0.5,+15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C



Description

MRF19045LR3 is Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


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