MRF19030LR3

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Transistor Type: LDMOS
Gain: 13dB
Power - Output: 30W
Voltage - Test: 26V
Voltage - Rated: 65V
Manufacturer: Freescale Semiconductor
Frequency: 1.96GHz
Current - Test: 300mA
Package / Case: NI-400
Supplier Device Package: NI-400
Current Rating: 1µA


Features:

• CDMA Performance @ 1990 MHz, 26 Volts
        IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
        885 kHz  -47 dBc @ 30 kHz BW
        1.25 MHz -55 dBc @ 12.5 kHz BW
        2.25 MHz -55 dBc @ 1 MHz BW
        Output Power 4.5 Watts Avg.
        Power Gain 13.5 dB
        Efficiency 17%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW  Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.


Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	VDSS	65	Vdc
Gate-Source Voltage	VGS	-0.5, +15	Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	83.3 0.48	Watts W/°C
Storage Temperature Range	Tstg	- 65 to +150	°C
Operating Junction Temperature	TJ	200	°C

Description

MRF19030LR3 is Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.