MRF18090AS Selling Leads, Price trend, MRF18090AS DataSheet download, circuit diagram from SeekIC.com

Specifications Symbol Rating Range Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, 0.5 Vdc Total Device Dissipation @ TC = 25°CDerate above 25°C PD 2501.43 WattsW/°C Storage Temperature Range Tstg 65 to +200 °C O...

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SeekIC No. : 004426856 Detail

MRF18090AS: Specifications Symbol Rating Range Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, 0.5 Vdc Total Device Dissipation @ TC = 25°CDerate ab...

MRF18090AS Data Sheet

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Part Number:: MRF18090AS
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/12/24

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Recent History
What is this?

MRF1.6/5.6 evaluate
DescriptionSmall, Screw lock coupling, Standard coaxial connectors MRF1.6/5.6
MRF1.6/5.6-AP-2.5C evaluate
RF Connectors Obsolete
MRF1.6/5.6-AP-59U evaluate
RF Connectors Obsolete

Product Details

Description

Specifications

Symbol	Rating	Range	Unit
Drain-Source Voltage	V_DSS	65	Vdc
Gate-Source Voltage	V_GS	+15, 0.5	Vdc
Total Device Dissipation @ T_C= 25°C Derate above 25°C	P_D	250 1.43	Watts W/°C
Storage Temperature Range	T_stg	65 to +200	°C
Operating Junction Temperature	T_J	200	°C

Description

MRF18090AS is Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications.
MRF18090AS features

• GSM and EDGE Performances, Full Frequency Band
Power Gain - 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency - 52% (Typ) @ 90 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters

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MRF18090AS

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