MRF18090AR3

Series: -
Noise Figure: -
Packaging: Tape & Reel (TR)
Gain: 13.5dB
Transistor Type: LDMOS
Voltage - Test: 26V
Voltage - Rated: 65V
Current Rating: 10µA
Manufacturer: Freescale Semiconductor
Frequency: 1.81GHz
Power - Output: 90W
Package / Case: NI-880
Supplier Device Package: NI-880
Current - Test: 750mA


Description

The MRF18090AR3 is one kind of 1.80-1.88 GHz, 90 W, 26 V lateral N-channel RF power MOSFETs that designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. It can be used in FM, TDMA, CDMA and multicarrier amplifier applications and class AB for GSM and GSM EDGE cellular radio applications.

Features of the MRF18090AR3 are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)internally matched, controlled Q, for ease of use;(3)high gain, high efficiency and high linearity;(4)integrated ESD protection;(5)designed for maximum gain and insertion phase flatness;(6)excellent thermal stability;(7)characterized with series equivalent large-signal impedance parameters;(8)RoHS compliant.

The absolute maximum ratings of the MRF18090AR3 can be summarized as:(1)drain-source voltage:-0.5 to +65 Vdc;(2)gate-source voltage:-0.5 to +15 Vdc;(3)total device dissipation @ TC=25°C:250 W;(4)total derate above 25°C:1.43 W/°C;(5)storage temperature range:-65 to +150 °C;(6)operating junction temperature:200 °C;(7)thermal resistance, junction to case:0.7 °C/W.If you want to know more information such as the electrical characteristics about the MRF18090AR3, please download the datasheet in www.seekic.com or www.chinaicmart.com .