MRF18090A

Specifications Symbol Rating Range Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, 0.5 Vdc Total Device Dissipation @ TC = 25°CDerate above 25°C PD 2501.43 WattsW/°C Storage Temperature Range Tstg 65 to +200 °C O...

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SeekIC No. : 004426855 Detail

MRF18090A: Specifications Symbol Rating Range Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, 0.5 Vdc Total Device Dissipation @ TC = 25°CDerate ab...

floor Price/Ceiling Price

Part Number:
MRF18090A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/5

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Product Details

Description



Specifications

Symbol
Rating
Range
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
+15, 0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
Watts
W/°C
Storage Temperature Range
Tstg
65 to +200
°C
Operating Junction Temperature
TJ
200
°C



Description

MRF18090A is Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications.
MRF18090A features

• GSM and EDGE Performances, Full Frequency Band
   Power Gain - 13.5 dB (Typ) @ 90 Watts (CW)
   Efficiency - 52% (Typ) @ 90 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters




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