Specifications Symbol Rating Range Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, 0.5 Vdc Total Device Dissipation @ TC = 25°CDerate above 25°C PD 2501.43 WattsW/°C Storage Temperature Range Tstg 65 to +200 °C O...
MRF18090A: Specifications Symbol Rating Range Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, 0.5 Vdc Total Device Dissipation @ TC = 25°CDerate ab...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol |
Rating |
Range |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
+15, 0.5 |
Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
250 1.43 |
Watts W/°C |
Storage Temperature Range |
Tstg |
65 to +200 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |
MRF18090A is Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications.
MRF18090A features
• GSM and EDGE Performances, Full Frequency Band
Power Gain - 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency - 52% (Typ) @ 90 Watts (CW)
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters