MRF18085BR3

Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°CDerate above 25°C PD 2731.56 WattsW/°C Storage Temperature Range Tstg - 65 to +150 °C ...

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SeekIC No. : 004426854 Detail

MRF18085BR3: Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°CDerate a...

floor Price/Ceiling Price

Part Number:
MRF18085BR3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
273
1.56
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C



Description

MRF18085BR3 is Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz.  Suitable for TDMA, CDMA, and multicarrier amplifier applications.
MRF18085BR3 features

• GSM and GSM EDGE Performance, Full Frequency Band (1930 -  1990 MHz)
    Power Gain - 12.5 dB (Typ) @ 85 Watts CW
    Efficiency  - 50% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1930 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.




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