Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°CDerate above 25°C PD 2731.56 WattsW/°C Storage Temperature Range Tstg - 65 to +150 °C ...
MRF18085BR3: Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°CDerate a...
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Rating |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
-0.5, +15 |
Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
273 1.56 |
Watts W/°C |
Storage Temperature Range |
Tstg |
- 65 to +150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |
MRF18085BR3 is Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
MRF18085BR3 features
• GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990 MHz)
Power Gain - 12.5 dB (Typ) @ 85 Watts CW
Efficiency - 50% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1930 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.