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MRF18085AR3

Features: • GSM and GSM EDGE Performance, Full Frequency Band (1805-1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW• Internally Matched, Controlled Q, for Ease of Use• High Gain, High Efficiency and High Linearity• Integrated ESD Protec...

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SeekIC No. : 004426852 Detail

MRF18085AR3: Features: • GSM and GSM EDGE Performance, Full Frequency Band (1805-1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW• Internally Matched, Controlled ...

MRF18085AR3 Data Sheet

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Part Number:
MRF18085AR3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• GSM and GSM EDGE Performance, Full Frequency Band (1805-1880 MHz)
      Power Gain - 15 dB (Typ) @ 85 Watts CW
      Efficiency - 52% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1805 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Specifications

Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
273
1.56
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C



Description

MRF18085AR3 is Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/ cellular radio and WLL applications. Specified for GSM- GSM EDGE 1805-1880 MHz.


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