MRF18085AR

The MRF18085AR is one kind of 1800-1880 MHz, 85 W, 26 V GSM/GSM edge lateral N-channel RF power MOSFETs that designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. It can be used in TDMA, CDMA and multicarrier amplifier applications or class AB for PCN-PCS / cellular radio and WLL applications. Specified for GSM- GSM EDGE 1805-1880 MHz.

Features of the MRF18085AR are:(1)in tape and reel. R3 suffix=250 units per 56 mm, 13 inch reel;(2)internally matched, controlled Q, for ease of use;(3)high gain, high efficiency and high linearity;(4)integrated ESD protection;(5)designed for maximum gain and insertion phase flatness;(6)capable of handling 5:1 VSWR, @ 26 Vdc, @ P1dB output power, @ f=1805 MHz;(7)excellent thermal stability;(8)characterized with series equivalent large-signal impedance parameters;(9)available with low gold plating thickness on leads. L suffix indicates 40 nominal.

The absolute maximum ratings of the MRF18085AR can be summarized as:(1)drain-source voltage:-0.5 to +65 Vdc;(2)gate-source voltage:-0.5 to +15 Vdc;(3)total device dissipation @ TC=25°C:273 W;(4)total derate above 25°C:1.56 W/°C;(5)storage temperature range:-65 to +150 °C;(6)operating junction tempera-ture:200 °C;(7)thermal resistance, junction to case:0.79 °C/W.If you want to know more information such as the electrical characteristics about the MRF18085AR, please download the datasheet in www.seekic.com or www.chinaicmart.com .