MRF18085ALSR3

Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Drain-Source Breakdown Voltage : 65 V
Gain : 15 dB
Frequency : 1.88 GHz
Gate-Source Breakdown Voltage : - 0.5 V, + 15 V
Output Power : 85 W
Package / Case : NI-780S-3


Features:

• GSM and GSM EDGE Performance, Full Frequency Band (1805-1880 MHz)
      Power Gain - 15 dB (Typ) @ 85 Watts CW
      Efficiency - 52% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1805 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.


Specifications

Rating	Symbol	Value	Unit
Drain-Source Voltage	VDSS	-0.5, +65	Vdc
Gate-Source Voltage	VGS	-0.5, +15	Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	273 1.56	W W/°C
Storage Temperature Range	Tstg	- 65 to +150	°C
Operating Junction Temperature	TJ	200	°C

Description

MRF18085ALSR3 is Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/ cellular radio and WLL applications. Specified for GSM- GSM EDGE 1805-1880 MHz.