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MRF18085A

Features: • GSM and GSM EDGE Performance, Full Frequency Band (18051880 MHz) Power Gain 15 dB (Typ) @ 85 Watts CW Efficiency 52% (Typ) @ 85 Watts CW• Internally Matched, Controlled Q, for Ease of Use• High Gain, High Efficiency and High Linearity• Integrated ESD Protectio...

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SeekIC No. : 004426850 Detail

MRF18085A: Features: • GSM and GSM EDGE Performance, Full Frequency Band (18051880 MHz) Power Gain 15 dB (Typ) @ 85 Watts CW Efficiency 52% (Typ) @ 85 Watts CW• Internally Matched, Controlled Q, ...

MRF18085A Data Sheet

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Part Number:
MRF18085A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• GSM and GSM EDGE Performance, Full Frequency Band
  (18051880 MHz)
  Power Gain 15 dB (Typ) @ 85 Watts CW
  Efficiency 52% (Typ) @ 85 Watts CW
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
  @ f = 1805 MHz
• Excellent Thermal Stability
• Characterized with Series Equivalent LargeSignal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
  40 Nominal.


Specifications

Rating Symbol Value Unit
DrainSource Voltage VDSS 65 Vdc
GateSource Voltage VGS 0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 273
1.56		 Watts
W/°C
Storage Temperature Range Tstg 65 to +150 °C
Operating Junction Temperature TJ 200 °C



Description

MRF18085A is Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCNPCS/cellular radio and WLL applications. Specified for GSMGSM EDGE 1805 1880 MHz.




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