MRF18060ALSR3

Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 180 1.03 Watts...

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SeekIC No. : 004426844 Detail

MRF18060ALSR3: Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc ...

floor Price/Ceiling Price

Part Number:
MRF18060ALSR3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS 65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C Derate above 25°C PD

180 1.03

Watts
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C



Description

MRF18060ALSR3 is Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCNPCS/cellular radio and WLL applications. Specified for GSM1805 1880 MHz.
MRF18060ALSR3 features

• Typical GSM Performance, Full Frequency Band (1805 1880 MHz)
   Power Gain - 13 dB (Typ) @ 60 Watts
   Efficiency - 45% (Typ) @ 60 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
  13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
  40µ Nominal.




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