Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 180 1.03 Watts...
MRF18060ALSR3: Specifications Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc ...
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Rating | Symbol | Value | Unit |
Drain-Source Voltage | VDSS | 65 | Vdc |
Gate-Source Voltage | VGS | -0.5, +15 | Vdc |
Total Device Dissipation @ TC = 25°C Derate above 25°C | PD | 180 1.03 |
Watts W/°C |
Storage Temperature Range | Tstg | - 65 to +150 | °C |
Operating Junction Temperature | TJ | 200 | °C |
MRF18060ALSR3 is Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCNPCS/cellular radio and WLL applications. Specified for GSM1805 1880 MHz.
MRF18060ALSR3 features
• Typical GSM Performance, Full Frequency Band (1805 1880 MHz)
Power Gain - 13 dB (Typ) @ 60 Watts
Efficiency - 45% (Typ) @ 60 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
• Excellent Thermal Stability
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ Nominal.