Transistors RF MOSFET Power 5-400MHz 100Watts 28Volt Gain 12dB
MRF177: Transistors RF MOSFET Power 5-400MHz 100Watts 28Volt Gain 12dB
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Configuration : | Dual | Transistor Polarity : | N-Channel |
Frequency : | 400 MHz | Gain : | 12 dB |
Output Power : | 100 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 16 A | Gate-Source Breakdown Voltage : | +/- 40 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 744A-01 |
Packaging : | Tray |
Rating |
Symbol |
Value |
Unit |
DrainGate Voltage |
VDSS |
65 |
Vdc |
DrainGate Voltage (RGS = 1.0 M) |
VDGR |
65 |
Vdc |
GateSource Voltage |
VGS |
±40 |
Vdc |
Drain Current - Continuous |
ID |
16 |
Adc |
Total Device Dissipation @ TC = 25°C(1) Derate Above 25°C |
PD |
270 |
Watts |
1.54 |
W/°C | ||
Storage Temperature Range |
Tstg |
65 to 150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |