Transistors RF MOSFET Power RF Transistor
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 200 MHz | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 13 A | Gate-Source Breakdown Voltage : | 40 V |
Maximum Operating Temperature : | + 200 C | Package / Case : | Case 211-11 |
Packaging : | Tray |
Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VDSS |
65 |
Vdc |
DrainGate Voltage (RGS = 1.0 W) |
VDGO |
65 |
Vdc |
GateSource Voltage |
VGS |
±40 |
Vdc |
Drain Current - Continuous |
ID |
13 |
Adc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
270 1.54 |
Watts W/°C |
Storage Temperature Range |
Tstg |
65 to +150 |
°C |
Operating Temperature Range |
TJ |
200 |
°C |