Transistors RF MOSFET Power 5-175MHz 80Watts 28Volt Gain 13dB
MRF173: Transistors RF MOSFET Power 5-175MHz 80Watts 28Volt Gain 13dB
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 200 MHz | Gain : | 13 dB at 150 MHz |
Output Power : | 80 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 9 A | Gate-Source Breakdown Voltage : | +/- 40 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 211-11 |
Packaging : | Tray |
Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VDSS |
65 |
Vdc |
DrainGate Voltage |
VDGO |
65 |
Vdc |
GateSource Voltage |
VGS |
±40 |
Vdc |
Drain Current - Continuous |
ID |
9.0 |
Adc |
Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
220 1.26 |
Watts W/°C |
Storage Temperature Range |
Tstg |
65 to +150 |
°C |
Operating Temperature Range |
TJ |
200 |
°C |