Transistors RF MOSFET Power 5-500MHz 20Watts 28Volt Gain 13.5dB
MRF166C: Transistors RF MOSFET Power 5-500MHz 20Watts 28Volt Gain 13.5dB
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 500 MHz | Gain : | 13.5 dB |
| Output Power : | 20 W | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 4 A | Gate-Source Breakdown Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | Case 319-07 |
| Packaging : | Tray |
|
Rating |
Symbol |
Value |
Unit |
| DrainGate Voltage |
VDSS |
65 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
65 |
Vdc |
| GateSource Voltage |
VGS |
±40 |
Adc |
| Drain Current - Continuous |
ID |
4.0 |
Adc |
| Total Device Dissipation @ TC = 25°C Derate Above 25°C |
PD |
70 |
Watts |
|
0.4 |
W/°C | ||
| Storage Temperature Range |
Tstg |
65 to 150 |
°C |
| Operating Junction Temperature |
TJ |
200 |
°C |