Transistors RF MOSFET Power 5-500MHz 20Watts 28Volt Gain 13.5dB
MRF166C: Transistors RF MOSFET Power 5-500MHz 20Watts 28Volt Gain 13.5dB
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 500 MHz | Gain : | 13.5 dB |
Output Power : | 20 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 4 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | Case 319-07 |
Packaging : | Tray |
Rating |
Symbol |
Value |
Unit |
DrainGate Voltage |
VDSS |
65 |
Vdc |
DrainGate Voltage (RGS = 1.0 M) |
VDGR |
65 |
Vdc |
GateSource Voltage |
VGS |
±40 |
Adc |
Drain Current - Continuous |
ID |
4.0 |
Adc |
Total Device Dissipation @ TC = 25°C Derate Above 25°C |
PD |
70 |
Watts |
0.4 |
W/°C | ||
Storage Temperature Range |
Tstg |
65 to 150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |