Specifications Rating SYMBOL Value UNIT DrainGate VoltageDrainGate Voltage (RGS = 1.0 MW)GateSource VoltageDrain Current - ContinuousTotal Device Dissipation @ TC = 25Derate above 25Storage Temperature RangeOperating Junction Temperature VDSSVDGRVGSIDPDTstgTJ 6565± 408.0...
MRF166W: Specifications Rating SYMBOL Value UNIT DrainGate VoltageDrainGate Voltage (RGS = 1.0 MW)GateSource VoltageDrain Current - ContinuousTotal Device Dissipation @ TC = 25Derate abo...
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Rating |
SYMBOL |
Value |
UNIT |
DrainGate Voltage DrainGate Voltage (RGS = 1.0 MW) GateSource Voltage Drain Current - Continuous Total Device Dissipation @ TC = 25 Derate above 25 Storage Temperature Range Operating Junction Temperature |
VDSS VDGR VGS ID PD Tstg TJ |
65 65 ± 40 8.0 175 1.0 65 to +150 200 |
Vdc Vdc Adc ADC Watts /W |
NOTE: Handling and Packaging - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.