Specifications ID 900 mA VDSS 65 V VGS ±40 V PDISS 17.5 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC JC 10 OC/WDescriptionThe MRF161 is an Enhancement- Mode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Ap...
MRF161: Specifications ID 900 mA VDSS 65 V VGS ±40 V PDISS 17.5 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC JC 10 OC/WDescriptionThe MRF161 is an Enhancement- Mo...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
ID | 900 mA |
VDSS | 65 V |
VGS | ±40 V |
PDISS | 17.5 W @ TC = 25 OC |
TJ | -65 OC to +200 OC |
TSTG | -65 OC to +150 OC |
JC | 10 OC/W |
The MRF161 is an Enhancement- Mode N-Channel MOS Broadband RF Power Transistor for Wideband Large Signal Amplifier and Oscillator Applications from 2.0 to 400 MHz.