MRF160, US $ 17.21-20.87 , M/A-COM Technology Solutions, MRF160 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219468 Detail

MRF160: Transistors RF MOSFET Power 5-500MHz 4Watts 28Volt Gain 16dB

MRF160 Data Sheet

US $ 17.21~20.87 / Piece | Get Latest Price

Part Number:: MRF160
Mfg:: M/A-COM Technology Solutions
Supply Ability:: 5000

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$20.87
$18.78
$17.74
$17.21

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Upload time: 2024/11/26

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Recent History
What is this?

MRF1.6/5.6 evaluate
DescriptionSmall, Screw lock coupling, Standard coaxial connectors MRF1.6/5.6
MRF1.6/5.6-AP-2.5C evaluate
RF Connectors Obsolete
MRF1.6/5.6-AP-59U evaluate
RF Connectors Obsolete

Product Details

Quick Details

Configuration :	Single	Transistor Polarity :	N-Channel
Frequency :	500 MHz	Gain :	18 dB
Output Power :	4 W	Drain-Source Breakdown Voltage :	65 V
Continuous Drain Current :	1 A	Gate-Source Breakdown Voltage :	+/- 20 V
Maximum Operating Temperature :	+ 150 C	Package / Case :	Case 249-06
Packaging :	Tray

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tray
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 500 MHz
Gain : 18 dB
Output Power : 4 W
Continuous Drain Current : 1 A
Package / Case : Case 249-06

Features:

• Typical Performance at 400 MHz, 28 Vdc
      Output Power = 4.0 Watts
      Gain = 17 dB
      Efficiency = 50%
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Low C_rss 0.8 pF Typical at V_DS= 28 Volts

Specifications

Rating	Symbol	Value	Unit
Drain−Source Voltage	V_DSS	65	Vdc
DrainGate Voltage (R_GS = 1.0 M)	V_DGR	65	Vdc
Gate−Source Voltage	V_GS	±40	Vdc
Drain Current - Continuous	I_D	1.0	ADC
Total Device Dissipation @ T_C = 25°C Derate above 25°C	P_D	24 0.14	Watts W/°C
Storage Temperature Range	T_stg	−65 to +150	°C
Operating Junction Temperature	T_J	200	°C

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MRF160

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