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MRF158

Transistors RF MOSFET Power 5-500MHz 2Watts 28Volt Gain 16dB

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SeekIC No. : 00219447 Detail

MRF158: Transistors RF MOSFET Power 5-500MHz 2Watts 28Volt Gain 16dB

MRF158 Data Sheet

floor Price/Ceiling Price

US $ 13.77~21.83 / Piece | Get Latest Price
Part Number:
MRF158
Mfg:
M/A-COM Technology Solutions
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~50
  • Unit Price
  • $21.83
  • $14.58
  • $14.18
  • $13.77
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 500 MHz Gain : 18 dB
Output Power : 2 W Drain-Source Breakdown Voltage : 65 V
Continuous Drain Current : 0.5 A Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C Package / Case : Case 305A-01
Packaging : Tray    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Packaging : Tray
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 500 MHz
Gain : 18 dB
Output Power : 2 W
Continuous Drain Current : 0.5 A
Package / Case : Case 305A-01


Features:

• Guaranteed 28 Volt, 400 MHz Performance
     Output Power = 2.0 Watts
     Minimum Gain = 16 dB
     Efficiency = 55% (Typical)
• Grounded Source Package for High Gain and Excellent Heat Dissipation (MRF158R)
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Circuit board photomaster available upon request by
   contacting RF Tactical Marketing in Phoenix, AZ.


Specifications

Rating Symbol Value Unit
Drain−Source Voltage VDSS 65 Vdc
DrainGate Voltage (RGS = 1.0 M) VDGR 65 Vdc
Gate−Source Voltage VGS ±40 Vdc
Drain Current - Continuous ID 0.5 Adc
Total Device Dissipation @ TC = 25°C
                           Derate above 25°C		 PD 8.0
45		 Watts
W/°C
Storage Temperature Range Tstg −65 to +150 °C
Operating Junction Temperature TJ 200 °C



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