Transistors RF MOSFET Power RF LDMOS TO272-6N FORMED
MRF1570NT1: Transistors RF MOSFET Power RF LDMOS TO272-6N FORMED
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| Configuration : | Dual | Transistor Polarity : | N-Channel | ||
| Frequency : | 470 MHz | Gain : | 11.5 dB | ||
| Output Power : | 70 W | Drain-Source Breakdown Voltage : | 40 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-272-8 WARP EP | Packaging : | Reel |
| Rating | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | -0.5, +40 | Vdc |
| Gate-Source Voltage | VGS | ± 20 | Vdc |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD | 165 0.5 |
W W/°C |
| Storage Temperature Range | Tstg | - 65 to +150 | °C |
| Operating Junction Temperature | TJ | 200 | °C |