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MRF1570NT1

Transistors RF MOSFET Power RF LDMOS TO272-6N FORMED

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SeekIC No. : 00219962 Detail

MRF1570NT1: Transistors RF MOSFET Power RF LDMOS TO272-6N FORMED

MRF1570NT1 Data Sheet

floor Price/Ceiling Price

US $ 13.19~18.3 / Piece | Get Latest Price
Part Number:
MRF1570NT1
Mfg:
Freescale Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~271
  • 271~500
  • Unit Price
  • $18.3
  • $13.19
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Configuration : Dual Transistor Polarity : N-Channel
Frequency : 470 MHz Gain : 11.5 dB
Output Power : 70 W Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-272-8 WARP EP Packaging : Reel    

Description

Continuous Drain Current :
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 20 V
Output Power : 70 W
Drain-Source Breakdown Voltage : 40 V
Frequency : 470 MHz
Gain : 11.5 dB
Package / Case : TO-272-8 WARP EP


Specifications

Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +40 Vdc
Gate-Source Voltage VGS ± 20 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C		 PD 165
0.5		 W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Operating Junction Temperature TJ 200 °C



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